PBRN113E NXP Semiconductors, PBRN113E Datasheet - Page 4

• Manufacturer Part Number: PBRN113E
• Description: Pbrn113e Series Npn 800 Ma, 40 V Biss Rets; R1 = 1 Kohm, R2 = 1 Kohm
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBRN113E_SER_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
P
T
T
T
Fig 1. Power derating curves for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236)
j
amb
stg
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Limiting values
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
PBRN113EK, PBRN113ET
PBRN113ES
(mW)
P
2
tot
O
600
400
200
Rev. 01 — 1 March 2007
3
0
, standard footprint
…continued
75
25
NPN 800 mA, 40 V BISS RETs; R1 = 1 k , R2 = 1 k
2
O
3
, standard footprint.
Conditions
T
25
amb
(1)
(2)
(3)
2
25 C
75
PBRN113E series
125
T
006aaa998
amb
( C)
175
[1]
[2]
[3]
[1]
Min
-
-
-
-
-
65
65
© NXP B.V. 2007. All rights reserved.
Max
250
370
570
700
150
+150
+150
Unit
mW
mW
mW
mW
2
.
C
C
C
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