GT40Q322 TOSHIBA Semiconductor CORPORATION, GT40Q322 Datasheet

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GT40Q322

Manufacturer Part Number
GT40Q322
Description
Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GT40Q322
Manufacturer:
IR
Quantity:
3 000
Voltage Resonance Inverter Switching Application
Maximum Ratings
Thermal Characteristics
Equivalent Circuit
Preliminary
Enhancement-mode
High speed : t
FRD included between emitter and collector
The 4th generation
TO-3P(N) (Toshiba package name)
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
Pulsed collector current
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
Thermal resistance (IGBT)
Thermal resistance (diode)
Gate
Characteristics
Characteristics
f
= 0.14 µs (typ.) (I
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
Collector
Emitter
@ Tc
@ Tc
DC
Pulsed
@ Tc
@ Tc
(Ta = 25°C)
100°C
25°C
100°C
25°C
C
= 40A)
Symbol
Symbol
R
R
V
V
GT40Q322
T
th (j-c)
th (j-c)
I
I
P
CES
GES
I
CP
I
FP
T
stg
C
F
C
j
í55 to 150
Rating
0.625
1200
1.79
Max
±25
200
150
20
39
80
10
80
80
1
°C/W
°C/W
Unit
Unit
°C
°C
W
W
V
V
A
A
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
2-16C1C
GT40Q322
2003-07-07
Š
Š
Unit: mm

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GT40Q322 Summary of contents

Page 1

... CES V ±25 V GES 200 W T 150 ° í55 to 150 °C stg Symbol Max Unit R 0.625 °C/W th (j-c) R 1.79 °C/W th (j-c) 1 GT40Q322 Unit: mm JEDEC Š JEITA Š TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 2003-07-07 ...

Page 2

... off di/dt = í20 A/µ 90 90% 10 (off off 2 GT40Q322 Min Typ. Max Unit ±500 nA Š Š 5.0 mA Š Š 4.0 7.0 V Š 3.0 3.7 V Š 5550 pF Š Š 0.18 Š Š 0.26 Š Š µs 0.14 0.21 Š ...

Page 3

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 GT40Q322 030519EAA 2003-07-07 ...

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