DF5A6.8F TOSHIBA Semiconductor CORPORATION, DF5A6.8F Datasheet
DF5A6.8F
Manufacturer Part Number
DF5A6.8F
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF5A6.8F.pdf
(3 pages)
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Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD) only
Absolute Maximum Ratings
Electrical Characteristics
Guaranteed Level of ESD Immunity
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Criterion: No damage to device elements
Power dissipation
Junction temperature
Storage temperature range
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(Contact discharge)
Test Condition
Characteristic
Characteristic
IEC61000-4-2
TOSHIBA Diodes for Protecting against ESD
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
Z
T
ESD Immunity Level
V
Z
C
I
DF5A6.8F
T
P
stg
ZK
R
Z
Z
T
j
± 30kV
I
I
I
V
V
Z
Z
Z
R
R
= 5 mA
= 5 mA
= 0.5 mA
= 5 V
= 0, f = 1 MHz
−55~125
Rating
200
125
1
Test Condition
Unit
MW
°C
°C
Weight: 0.014 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
6.4
―
―
―
―
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Typ.
6.8
10
30
45
―
1-3H1A
DF5A6.8F
2007-11-21
Max
7.2
0.5
⎯
⎯
25
―
―
Unit: mm
Unit
μA
pF
Ω
Ω
V
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Datasheet:
DF5A6.8F Summary of contents
Page 1
... 0 MHz T R ESD Immunity Level ± 30kV 1 DF5A6.8F Unit: mm 1.CATHODE 1 2. ANODE 3.CATHODE2 4.CATHODE3 5.CATHODE4 ⎯ JEDEC ⎯ JEITA TOSHIBA 1-3H1A Weight: 0.014 g (typ.) Min Typ. Max Unit 6.4 6.8 7.2 V ― Ω ...
Page 2
... Marking Equivalent Circuit 100 REVERSE VOLTAGE VR (V) (Top View) Ta=25°C f=1MHz DF5A6.8F 2007-11-21 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF5A6.8F 20070701-EN 2007-11-21 ...