BGB101 NXP Semiconductors, BGB101 Datasheet - Page 10

• Manufacturer Part Number: BGB101
• Description: 0 Dbm Bluetooth Radio Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Aug 05
Receiver performance
SENS
P
VSWR
f
V
T
IM
R
R
R
R
R
1MHz
R
RF
on
i max
RSSI
0 dBm Bluetooth radio module
CO
C/I 1MHz
C/I 2MHz
C/I Image
C/I Image
C/I 3MHz
SYMBOL
3
out of band spurious emissions
(conducted)
sensitivity for BER
and PER
maximum input power in one
channel
voltage standing wave ratio
RF input frequency
RSSI voltage (monotonic over
range 86 dBm to 36 dBm)
wake up time from the power up
signal to correct RSSI output
intermodulation rejection
co-channel rejection
adjacent channel rejection
( 1 MHz)
bi-adjacent channel rejection
(N-2)
rejection at image frequency
(N+2)
rejection at image-adjacent
frequency (N+3)
in-band interference rejection
ratio, three or more channels
away
PARAMETER
0.5 %; note 7
0.1 %
30 MHz to 1 GHz; note 5
1 GHz to 12.75 GHz; note 5
1.8 GHz to 1.9 GHz; note 5
5.15 GHz to 5.3 GHz; note 5
without carrier offset
with dirty transmitter as
specified in [1]; note 5
with dirty transmitter as
specified in [1] at nominal test
conditions
BER < 0.1 %; note 5
normalized to Z
over full temperature and supply
range
P
P
No external capacitor on the
RSSI pin; R
wanted signal 64 dBm;
Interferers 5 and 10 channels
away; BER < 0.1 %
wanted signal 60dBm;
BER < 0.1 %
wanted signal 60dBm;
BER < 0.1 %
wanted signal 60dBm;
BER < 0.1 %
wanted signal 60dBm;
BER < 0.1 %
wanted signal 67dBm;
BER < 0.1 %
wanted signal 67dBm;
BER < 0.1 %; N+3 is a special
case, see above
in
in
=
=
86 dBm
36 dBm
10
CONDITIONS
load
o
> tbf k
= 50
2402
28
MIN.
20
0
1.5
0.2
1.3
3
33
11
27
43
TYP.
82
80
80
11
Preliminary specification
2480
50
MAX.
36
30
47
47
75
70
75
BGB101
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
MHz
V
V
dBc
dBc
dBc
dBc
dBc
dBc
dBc
s
UNIT