BYQ40EW NXP Semiconductors, BYQ40EW Datasheet - Page 2
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BYQ40EW
Manufacturer Part Number
BYQ40EW
Description
Byq40ew Series Rectifier Diodes Ultrafast, Rugged
Manufacturer
NXP Semiconductors
Datasheet
1.BYQ40EW.pdf
(6 pages)
Philips Semiconductors
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
December 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
V
R
rr
F
fr
th j-mb
th j-a
s
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Forward recovery voltage
j
= 25 ˚C unless otherwise stated
CONDITIONS
per diode
both diodes conducting
in free air
CONDITIONS
I
I
I
V
V
I
I
-dI
I
F
F
F
F
F
F
R
R
= 20 A; T
= 20 A
= 40 A
= 2 A; V
= 1 A; V
= 1 A; dI
F
= V
= V
/dt = 100 A/ s
RWM
RWM
; T
R
R
F
2
j
/dt = 10 A/ s
= 150˚C
j
= 100 ˚C
30 V; -dI
30 V;
F
/dt = 20 A/ s
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
BYQ40EW series
TYP.
TYP.
0.97
1.06
0.8
0.7
0.7
45
23
6
8
-
-
Product specification
MAX.
MAX.
1.05
0.75
0.85
1.05
1.20
100
18
30
1
-
-
Rev 1.000
UNIT
UNIT
K/W
K/W
K/W
mA
nC
ns
V
V
V
V
A