30QWK2CZ47 TOSHIBA Semiconductor CORPORATION, 30QWK2CZ47 Datasheet - Page 2

• Manufacturer Part Number: 30QWK2CZ47
• Description: Toshiba Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Marking
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
Please refer to the Rectifiers databook for further information.
V
I
I
T
O
FSM
Characteristics
j
RRM
:
:
indicator
:
:
30QWK2CZ
Use this rating with reference to the above. V
this temperature coefficient into account designing a device at low temperature.
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I
allowable Tamax-I
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a T
O
and T
j
be below 120°C. When using this device, take the margin into consideration by using an
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
O
curve.
j
of below 120°C.
2
RRM
Abbreviation Code
30QWK2CZ
has a temperature coefficient of 0.1%/°C. Take
30QWK2CZ47
Part No.
30QWK2CZ47
2006-11-10