30JL2C41 TOSHIBA Semiconductor CORPORATION, 30JL2C41 Datasheet - Page 2

• Manufacturer Part Number: 30JL2C41
• Description: Toshiba High Efficiency Diode Stack Hed Silicon Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

MARKING
Handling Precaution
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180.
Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device.
We recommend that a device be used at a Tj of below 120°C under the worst load and heat radiation conditions.
Please refer to the Rectifiers databook for further information.
V
I
O
RRM
:
:
30JL2C
We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the
absolute maximum rating of V
an AC circuit. V
account designing a device at low temperature.
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I
the margin by using an allowable Tamax-I
O
. Carry out adequate heat design. If you can’t design a circuit with excellent heat radiation, set
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
RRM
has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into
RRM
for a DC circuit and be no greater than 50% of that of V
2
O
curve.
Abbreviation Code
30JL2C
30JL2C41
Part No.
30JL2C41
2006-11-08
RRM
for