HN29W12811 Renesas Electronics Corporation., HN29W12811 Datasheet - Page 23
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
HN29W12811
Manufacturer Part Number
HN29W12811
Description
128m And Type Flash Memory More Than 8,029-sector 135,657,984-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN29W12811.pdf
(42 pages)
- Current page: 23 of 42
- Download datasheet (337Kb)
Timing Waveforms
Power on and off Sequence
/Busy
Notes: 1. RES must be kept at the V
RES
RDY
V
WE
CE
CC
2. RES must be kept at the V
3.
*
to guarantee data stored in the chip.
status data polling and RDY/Busy outputs the V
1
t
VRS
: Undefined
t
BSY
t
t
RP
CWRS
t
CES
ILR
IHR
t
CEH
level referred to DC characteristics at the rising and falling edges of V
level referred to DC characteristics while I/O7 outputs the V
High-Z
*
2
t
CESR
Ready
OL
level.
t
t
RP
BSY
t
CES
t
CEH
HN29W12811 Series
t
CESR
t
CWRH
t
VRH
OL
*
1
level in the
t
DFP
CC
23
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