HN29W12811 Renesas Electronics Corporation., HN29W12811 Datasheet - Page 25
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HN29W12811
Manufacturer Part Number
HN29W12811
Description
128m And Type Flash Memory More Than 8,029-sector 135,657,984-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN29W12811.pdf
(42 pages)
Serial Read (1) with CA after SC Timing Waveform
Erase and Status Data Polling Timing Waveform (Sector Erase)
I/O0 to I/O7
Notes: 1. The status returns to the Standby at the rising edge of CE.
I/O0 to I/O7
/Busy
CDE
RES
RDY
Notes: 1. Any commands,including reset command FFH, cannot be input while RDY/Busy outputs a V
WE
OE
CE
SC
/Busy
2. Output data is not valid after the number of the SC pulse exceeds 2112. (0
3. Output data is not valid after the number of the SC pulse exceeds (2112-m). (j
4. After any commands are written, the status can return to the standby after the command FFH is input and CE turns to the V
5. This interval can be repeated h cycle. (1 h
CDE
RES
t
RDY
SCS
WE
OE
t
CE
SC
RP
t
OEWS
t
2. The status returns to the standby status after RDY/Busy returns to High-Z.
CDS
t
t
CDH
CES
t
t
WP
t
DS
SCS
t
00H
CWC
t
t
t
WPH
DH
RP
t
OEWS
t
t
CDS
CDS
t
WP
t
AS
SA(1)
t
CWC
t
DS
t
t
AH
WPH
t
t
CES
WP
t
CWC
20H
t
t
DBR
t
WP
t
AS
CDS
t
SA(2)
CDH
t
WPH
t
AH
t
OER
t
t
WSD
DH
t
RBSY
t
OEL
t
t
AS
OES
High-Z
t
t
WP
t
t
SAC
SP
RS
t
SA(1)
CWC
t
SCC
D0out
t
SPL
t
t
WPH
AH
t
t
SAC
SH
t
High-Z
SCC
t
AS
D1out
*
2
t
t
t
WP
SH
SAC
t
SA(2)
CWC
t
CDH
t
t
WPH
AH
2048 + 64)
t
t
SAC
CDS
t
SOH
t
D(k)out
DS
t
WP
t
DF
t
B0H
t
SW
OEWS
*
t
2
CEH
t
DB
t
t
t
t
AS
DH
OEPS
WP
CA(1)
t
t
t
CWC
t
CDH
SCHW
AH
t
WPH
h cycle
t
t
AS
WP
CA(2)
t
OER
t
t
AH
*
CE
5
t
OEL
t
OES
k
t
t
SAC
SP
D(m)out
t
SCC
2111-m, 0
IO7 = V
2111)
t
t
*
t
SH
SPL
OE
1
t
ASE
t
SAC
t
SCC
D(m+1)out
t
DF
OL
t
SH
*
3
HN29W12811 Series
t
SAC
m
OL
.
2111)
t
t
SAC
SOH
D(m+j)out
t
COH
t
IO7 = V
DF
*
*
1
t
3
CPH
High-Z
OH
*
2
t
t
RDY
DF
t
DS
t
CDS
t
t
WP
FFH
CDS
IH
t
t
CDH
DH
level.
t
CEH
25
*
4