HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 15

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

Page Program Command (41H): Page program allows fast programming of 128-word of data. Writing of
41H initiates the page program operation. From 2nd cycle to 129th cycle write data must be serially inputted.
Address A6 to A0 have to be incremented from 00H to 7FH. After completion of data loading, the WSM
controls the program pulse application and verify operation. Basically re-program must not be done on a page
which has already programmed.
Data Protection: The HN29WT800 Series, HN29WB800 Series provide selective block locking of memory
blocks. Each block has an associated nonvolatile lock-bit which determines the lock status of the block. In
addition, the HN29WT800 Series, HN29WB800 Series have a master write protect pin (WP) which prevents
any modifications to memory blocks whose lock-bits are set to Low, when WP is low. When WP is high or
RP is V
cleared to High by erase.
Power Supply Voltage: A delay time of 2 s is required before any device operation is initiated. The delay
time is measured from the time V
Falling in Busy status is not recommended for possibility of damaging the device.
Absolute Maximum Ratings
Parameter
V
All input and output voltages except V
RP
A9, RP supply voltage
Operating temperature range
Storage temperature range
Storage temperature under bias
Notes: 1. Relative to V
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
CC
voltage
2. Minimum DC voltage is –0.5 V on input/output pins. During transition, this level may undershoot to
HH
, all blocks can be programmed or erased regardless of the state of lock-bits, and the lock-bits are
–2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins are V
transitions, may overshoot to V
SS
.
CC
Symbol
Cin
Cout
reaches V
CC
, A9,
CC
+1.5 V for periods < 20 ns.
Symbol
Vin, Vout
V
V
Topr
Tstg
Tbias
CC
CC
HH
HN29WT800 Series, HN29WB800 Series
min (3.0 V). During powerup, RP = V
, V
Min
—
—
ID
Typ
—
—
Value
–0.2 to +4.6
–0.6 to +4.6
–0.6 to +14.0
0 to +70
–65 to +125
–10 to +80
Max
8
12
Unit
pF
pF
Test conditions
Vin = 0 V
Vout = 0 V
Unit
V
V
V
˚C
˚C
˚C
CC
+0.5 V which, during
SS
is recommended.
Notes
1
1, 2
1, 2
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