HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 21

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

Command Write Operation
Parameter
Write cycle time
Address setup time
Address hold time
Data setup time
Data hold time
CE setup time
CE hold time
Write pulse width
Write pulse high time
WE setup time
WE hold time
CE pulse width
CE pulse high time
Duration of program operation
Duration of block erase operation
BYTE high or low setup time
BYTE high or low hold time
RP high recovery to WE low
Block lock setup to write enable
high
Block lock hold from valid SRD
WE high to RDY/Busy low
CE high to RDY/Busy low
Note: Read operation parameters during command write operations mode are the same as during read timing
waveform. Typical values at V
Symbol Min
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WC
AS
AH
DS
DH
CS
CH
WP
WPH
WS
WH
CEP
CEPH
DAP
DAE
BS
BH
PS
BLS
WPS
BLH
WPH
WHRL
EHRL
CC
= 3.3 V, Ta = 25˚C.
HN29WT800/HN29WB800
-8
80
50
10
50
10
0
0
60
20
0
0
60
20
—
—
50
80
500
80
80
0
0
—
—
HN29WT800 Series, HN29WB800 Series
Typ Max Min
—
—
—
—
—
—
—
—
—
—
—
—
—
25
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
80
600
—
—
—
—
—
—
—
80
80
-10
100
50
10
50
10
0
0
60
20
0
0
60
20
—
—
50
100
500
100
100
0
0
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
25
50
—
—
—
—
—
—
—
—
—
Max Min
—
—
—
—
—
—
—
—
—
—
—
—
—
80
600
—
—
—
—
—
—
—
100
100
-12
120
50
10
50
10
0
0
60
20
0
0
60
20
—
—
50
120
500
120
120
0
0
—
—
Typ Max Unit
—
—
—
—
—
—
—
—
—
—
—
—
—
25
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
80
600
—
—
—
—
—
—
—
120
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
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