HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 18

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29WT800 Series, HN29WB800 Series
Read Operation
Parameter
Read cycle time
Address to output delay
CE to output delay
OE to output delay
CE or OE high to output float *
Address to output hold
OE hold from WE high Status register
read in busy
OE hold from WE high Other read
RP recovery time before read
RP low to output High-Z
CE low to BYTE high or low
Address to BYTE high or low
BYTE to output delay
BYTE low to output High-Z
Notes: 1. t
18
2. Timing measurements are made under read timing waveform.
longer driven.
DF
is defined as the time at which the output achieves the open circuit condition and data is no
1
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
ACC
CE
OE
DF
OH
OEH
OEH
PS
PHZ
BCD
BAD
BYTE
BHZ
HN29WT800/HN29WB800
-8
Min
80
—
—
—
—
0
80
0
500
—
—
—
—
—
—
80
80
40
25
—
—
—
—
150
5
5
80
25
Max
-10
Min
100
—
—
—
—
0
100
0
500
—
—
—
—
—
Max
—
100
100
50
25
—
—
—
—
150
5
5
100
25
-12
Min
120
—
—
—
—
0
120
0
500
—
—
—
—
—
Max
—
120
120
60
30
—
—
—
—
300
5
5
120
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns