HN2S01F TOSHIBA Semiconductor CORPORATION, HN2S01F Datasheet
HN2S01F
Manufacturer Part Number
HN2S01F
Description
Toshiba Diode Silicon Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2S01F.pdf
(4 pages)
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Low Voltage High Speed Switching Application
l HN2S01F is composed of 3 independent diodes.
l Low reverse current: V
Maximum Ratings
Electrical Characteristics
* : This is maximum rating of single diode (Q1 or Q2 or Q3).
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Forward voltage
Reverse current
Total capacitance
In the case of using 2 ro 3 diodes, the maximum ratings
per diodes is 75 % of the single diode one.
Characteristic
Characteristic
(Ta = 25° ° ° ° C)
F
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
= 0.23V (typ.) @I
(Q1, Q2, Q3 Common, Ta = 25° ° ° ° C)
Symbol
Symbol
V
V
V
V
I
T
T
I
FSM
F (1)
F (2)
F (3)
C
V
I
FM
I
T
RM
P
opr
stg
R
HN2S01F
O
R
T
j
F
= 5mA
Circuit
Test
―
―
―
―
―
−55~125
−40~100
Rating
200 *
100 *
300
125
1 *
15
10
1
I
I
I
V
V
F
F
F
R
R
= 1mA
= 5mA
= 100mA
= 10V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
°C
V
V
A
z
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
Min
―
―
―
―
―
Typ.
0.18
0.23
0.35
20
―
1-3K1C
SC-74
HN2S01F
―
2001-06-05
Unit in mm
Max
0.30
0.50
―
20
40
Unit
µA
pF
V
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HN2S01F Summary of contents
Page 1
... TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application l HN2S01F is composed of 3 independent diodes. l Low reverse current 0.23V (typ (Ta = 25° ° ° ° C) Maximum Ratings Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current ...
Page 2
... Pin Assignment (Top View) Marking 2 HN2S01F 2001-06-05 ...
Page 3
... HN2S01F 2001-06-05 ...
Page 4
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 HN2S01F 000707EAA 2001-06-05 ...