GT8G134 TOSHIBA Semiconductor CORPORATION, GT8G134 Datasheet - Page 5

• Manufacturer Part Number: GT8G134
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.1
10
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1
10
0
0
Common emitter
Ta = −40°C
Common emitter
Ta = 70°C
t on
t off
t f
t r
Gate-emitter voltage V
Gate-emitter voltage V
1
1
Gate resistance R G (Ω)
Switching Time – R
V
V
2
2
CE
CE
100
– V
– V
GE
GE
3
3
GE
GE
Common emitter
V CC = 300 V
V GE = 3 V
I C = 150 A
Ta = 25°C
G
(V)
(V)
4
4
I C = 150 A
I C = 150 A
120
120
90
60
90
60
1000
5
5
5
400
300
200
100
0.1
10
6
5
4
3
2
1
0
0
1
0
0
0
Common emitter
Ta = 25°C
V CE
Gate-emitter voltage V
1
t off
10
50
t on
Collector current I C (A)
t f
t r
Gate charge Q G (nC)
Switching Time – I
V
CE
V
2
CE
, V
100
20
GE
– V
V GE
GE
– Q
3
G
GE
Common emitter
V CC = 300 V
R L = 2 Ω
Ta = 25°C
Common emitter
V CC = 300 V
V GE = 3 V
R G = 62 Ω
Ta = 25°C
C
150
30
(V)
4
120
I C = 150 A
90
60
GT8G134
2007-07-23
200
40
5
8
6
4
2
0