CPH5612 Sanyo Semiconductor Corporation, CPH5612 Datasheet - Page 2

• Manufacturer Part Number: CPH5612
• Description: Ultrahigh-speed Switching N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
2168
Switching Time Test Circuit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
5
0
0
0.95
P.G
2.9
4V
0V
4
PW=10 s
D.C. 1%
0.1
Parameter
V IN
3
2
0.2
Drain-to-Source Voltage, V DS -- V
0.4
0.4
0.3
V IN
G
50
I D -- V DS
0.4
0.5
0.15
V DD =50V
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
D
0.6
S
I D =0.5A
0.05
R L =100
Symbol
V SD
Qgs
Qgd
0.7
Qg
CPH5612
V OUT
0.8
V GS =1.0V
V DS =50V, V GS =4V, I D =1A
V DS =50V, V GS =4V, I D =1A
V DS =50V, V GS =4V, I D =1A
I S =1A, V GS =0
0.9
IT08335
1.0
CPH5612
Conditions
3.0
2.5
2.0
1.5
1.0
0.5
0
Electrical Connection
0
V DS =10V
Gate-to-Source Voltage, V GS -- V
5
0.5
min
1
I D -- V GS
4
2
1.0
Ratings
typ
3
0.82
4.4
1.2
0.8
max
1.5
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Top view
1.2
No.8180-2/4
IT08336
Unit
nC
nC
nC
V
2.0