CPH5612 Sanyo Semiconductor Corporation, CPH5612 Datasheet - Page 3

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CPH5612

Manufacturer Part Number
CPH5612
Description
Ultrahigh-speed Switching N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1200
1000
100
800
600
400
200
1.0
0.1
10
0.01
4
3
2
1
0
0
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
7
5
0
0
V DS =50V
I D =1A
2
2
3
2
1
Gate-to-Source Voltage, V GS -- V
3
Total Gate Charge, Qg -- nC
5
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
7
5
V GS -- Qg
0.1
4
2
y
7
fs -- I D
t d (on)
0.1
2
3
3
6
2
5
3
7
1.0
Ta=25 C
I D =500mA
8
V DD =50V
V GS = 4 V
4
V DS =10V
5
IT08339
IT08341
IT08343
IT08337
7
2
CPH5612
1.0
10
5
3
0.001
0.001
1000
1200
1000
0.01
0.01
100
800
600
400
200
1.0
0.1
1.0
0.1
10
0.01
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
--60
0.2
0
V GS =0
Ta=25 C
Single pulse
Mounted on a ceramic board (600mm
2 3
--40
10
0.3
5 7
--20
20
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
0.4
0.1
Operation in this
area is limited by R DS (on).
Ambient Temperature, Ta -- C
0
30
2 3
0.5
R DS (on) -- Ta
20
I F -- V SD
40
5 7
0.6
A S O
40
1.0
50
60
2 3
0.7
60
80
5 7
2
0.8
10
70
0.8mm) 1unit
100
0.9
2 3
80
120
No.8180-3/4
f=1MHz
5 7
1.0
<10 s
140
90
IT08338
IT08340
IT08342
IT08344
100
160
100
1.1
2

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