PHP125N06T NXP Semiconductors, PHP125N06T Datasheet

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PHP125N06T

Manufacturer Part Number
PHP125N06T
Description
Trenchmos Transistor Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHP125N06T
Manufacturer:
NXP
Quantity:
12 500
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
converters and general purpose
switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
1 Current limited by package to 75A from a theoretical value of 125A.
December 1997
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
1
2
3
GS
, T
j
gate
drain
source
drain
for
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
use
transistor
in
DC-DC
mode
1
1
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
1
= 10 V
SYMBOL
MIN.
MIN.
- 55
-
-
-
-
-
-
-
-
g
MAX.
Product specification
250
175
55
75
8
MAX.
MAX.
240
250
175
PHP125N06T
55
55
20
75
75
2
d
s
Rev 1.100
UNIT
UNIT
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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PHP125N06T Summary of contents

Page 1

... V GS PIN CONFIGURATION tab CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 Product specification PHP125N06T MAX. UNIT 55 75 250 175 SYMBOL MIN. MAX. UNIT - 240 - 250 ...

Page 2

... Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad 2 Product specification PHP125N06T TYP. MAX. UNIT - 0.6 K K/W MIN. TYP. MAX. UNIT ...

Page 3

... -dI /dt = 100 - CONDITIONS ˚ Product specification PHP125N06T MIN. TYP. MAX. UNIT - - 240 A - 0. MIN. TYP. MAX. UNIT ...

Page 4

... Fig.5. Typical output characteristics BUKX508-55 RDS(ON)/mOhm 15 VGS/ 100 100 100 = 25 ˚C Fig.6. Typical on-state resistance Product specification PHP125N06T Zth / (K/W) 0.5 0.2 0 1E-07 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-mb ...

Page 5

... 100 150 200 0.01 Fig.12. Typical capacitances f Product specification PHP125N06T VGS(TO BUK759-60 max. typ. min. - 100 150 Fig.10. Gate threshold voltage. = f(T ); conditions mA Sub-Threshold Conduction 2% typ 98 ...

Page 6

... Fig.15. Normalised avalanche energy rating. DS VGS 25 0 0.8 1 1.2 j VGS 0 6 Product specification PHP125N06T WDSS 100 120 140 Tmb / f(T ); conditions DSS VDS T.U. RGS shunt Fig.16. Avalanche energy test circuit ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". December 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification PHP125N06T 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.100 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 8 Product specification PHP125N06T Rev 1.100 ...

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