PHP125N06T NXP Semiconductors, PHP125N06T Datasheet - Page 5

• Manufacturer Part Number: PHP125N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.9. Normalised drain-source on-state resistance.
gfs/S
I
a = R
ID/A
D
100
70
60
50
40
30
20
10
Fig.8. Typical transconductance, T
80
60
40
20
2.5
1.5
0.5
0
= f(V
0
-100
0
2
1
0
Fig.7. Typical transfer characteristics.
a
DS(ON)
GS
g
) ; conditions: V
fs
1
-50
/R
= f(I
20
DS(ON)25 ˚C
BUK959-60
D
); conditions: V
2
transistor
0
Tmb / degC
40
= f(T
3
VGS/V
50
ID/A
Tj/C = 175
DS
Rds(on) normlised to 25degC
j
); I
= 25 V; parameter T
4
60
D
100
= 25 A; V
DS
= 25 V
5
25
150
j
80
= 25 ˚C .
GS
6
= 5 V
200
100
7
j
5
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
V
Fig.12. Typical capacitances, C
7
6
5
4
3
2
1
0
0.01
-100
5
4
3
2
1
0
I
C = f(V
GS(TO)
D
VGS(TO) / V
0
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
0.1
j
); conditions: I
0
2%
Tj / C
2
50
1
VDS/V
j
GS
D
= 25 ˚C; V
typ
= 1 mA; V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
Product specification
PHP125N06T
10
iss
, C
150
98%
BUK759-60
DS
DS
oss
4
= V
, C
= V
Rev 1.100
200
GS
100
rss
GS
Coss
Crss
Ciss
.
5