BUK108-50DL NXP Semiconductors, BUK108-50DL Datasheet - Page 6

• Manufacturer Part Number: BUK108-50DL
• Description: Buk108-50dl Powermos Transistor Logic Level Topfet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
Logic level TOPFET
Fig.8. Normalised drain-source on-state resistance.
Fig.9. Typical overload protection characteristics.
a = R
120
100
Fig.10. Normalised limiting overload dissipation.
100
80
60
40
20
0.1
10
0
1
t
1.5
1.0
0.5
-60
d sc
0.01
PDSM%
0
DS(ON)
-60 -40 -20
td sc / ms
P
= f(P
a
-40
DSM
/R
% =100 P
DS
-20
DS(ON)
); conditions: V
0
25 ˚C = f(T
0
DSM
20
20
/P
PDS / kW
Tj / C
Tmb / C
40
40
DSM
0.1
Normalised RDS(ON) = f(Tj)
j
IS
); I
60
(25 ˚C) = f(T
60
D
4 V; T
80 100 120 140
= 7.5 A; V
80
100
j
BUK108-50DL
= 25 ˚C.
mb
PDSM
120
IS
)
= 5 V
140
1
6
0.5
Fig.11. Typical overload protection characteristics.
Conditions: V
1
0
20
15
10
Fig.12. Typical clamping characteristics, 25 ˚C.
5
0
-60
Energy & Time
V
50
ID / A
I
IS(TO)
2
1
0
D
-60
= f(V
VIS(TO) / V
-20
= f(T
Fig.13. Input threshold voltage.
-40
DS
DD
); conditions: V
-20
j
); conditions: I
20
= 13 V; V
0
Energy / J
Time / ms
20
60
max.
VDS / V
min.
typ.
Tmb / C
40
IS
Tj / C
60
= 5 V; SC load = 30 m
100
IS
D
60
= 1 mA; V
= 0 V; t
BUK108-50DL
80
Product specification
140
Tj(TO)
typ.
100 120 140
p
BUK108-50DL
DS
180
50 s
BUK108-50DL
= 5 V
Rev 1.000
220
70