HAT1020R Renesas Electronics Corporation., HAT1020R Datasheet - Page 3

• Manufacturer Part Number: HAT1020R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1020R
Main Characteristics
Rev.10.00 Sep 07, 2005 page 3 of 6
–0.5
–0.4
–0.3
–0.2
–0.1
–20
–16
–12
4.0
3.0
2.0
1.0
–8
–4
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Test Condition:
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
–2
–2
Gate to Source Voltage
50
–6 V
–10 V
–4.5 V
–5 V
–4
–4
100
–4 V
–6
–6
V
Pulse Test
GS
Pulse Test
150
Ta (°C)
V
V
I
–8
= –2.5 V
–8
D
GS
DS
–3.5 V
–2 A
= –5 A
–1 A
–3 V
(V)
(V)
200
–10
–10
–0.03
–0.01
–100
–0.3
–0.1
0.05
0.02
0.01
–30
–10
–20
–16
–12
Static Drain to Source on State Resistance
0.5
0.2
0.1
–3
–1
–8
–4
–0.2
–0.1
0
1
0
Gate to Source Voltage
Ta = 25°C
1 shot pulse
Drain to Source Voltage V
Operation in
this area is
limited by R
V
Pulse Test
Note 4:
Typical Transfer Characteristics
Maximum Safe Operation Area
Pulse Test
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
DS
–0.3
–0.5
= –10 V
–1
Drain Current
vs. Drain Current
–1
75°C
–1
DS (on)
–2
10 µs
V
–3
–2
GS
–3
= –4 V
–10 V
–10
25°C
I
D
–5
Tc = –25°C
100 µs
V
(A)
–4
–30
GS
DS
–10
(V)
(V)
–100
–20
–5