HAT1020R Renesas Electronics Corporation., HAT1020R Datasheet - Page 4

• Manufacturer Part Number: HAT1020R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1020R
Rev.10.00 Sep 07, 2005 page 4 of 6
0.20
0.16
0.12
0.08
0.04
–10
–20
–30
–40
–50
500
200
100
Static Drain to Source on State Resistance
50
20
10
–40
–0.2
0
0
5
0
Reverse Drain Current
I
Pulse Test
D
V
Case Temperature
Dynamic Input Characteristics
= –5 A
DS
Body-Drain Diode Reverse
–0.5 –1
Gate Charge
V
0
8
–10 V
GS
V
DD
vs. Temperature
Recovery Time
= –4 V
V
= –25 V
DD
40
16
–10 V
–5 V
= –5 V
–10 V
–25 V
–2
–5 A, –2 A, –1 A
di / dt = 20 A / µs
V
GS
V
80
24
GS
= 0, Ta = 25°C
Qg (nc)
I
D
–5
= –5 A
Tc (°C)
–2 A, –1 A
I
120
DR
32
–10 –20
(A)
160
40
–12
–16
–20
–4
–8
0
10000
3000
1000
300
100
500
200
100
0.5
0.2
30
10
20
10
50
20
10
–0.2
–0.1
5
2
1
5
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
V
PW = 3 µs, duty ≤ 1 %
GS
–0.2
–0.5
Switching Characteristics
–10
= –4 V, V
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current I
Tc = –25°C
75°C
–0.5
Drain Current
–1
–20
DD
Coss
Crss
Ciss
25°C
–2
= –10 V
–1
–30
–2
I
D
V
Pulse Test
D
–5
DS
V
f = 1 MHz
t r
GS
(A)
(A)
t f
–40
t d(on)
= –10 V
DS
= 0
t d(off)
–10 –20
–5
(V)
–50
–10