HAT1020R Renesas Electronics Corporation., HAT1020R Datasheet - Page 5

• Manufacturer Part Number: HAT1020R
• Description: Silicon P Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1020R
Rev.10.00 Sep 07, 2005 page 5 of 6
Vin
–4 V
Vin Monitor
Switching Time Test Circuit
0.0001
50 Ω
0.001
0.01
0.1
10
10 µ
1
D = 1
0.5
D.U.T.
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
R
L
V
= –10 V
1 m
DD
–20
–16
–12
Vout
Monitor
–8
–4
0
0
Source to Drain Voltage
10 m
V
GS
Reverse Drain Current vs.
–0.4
Source to Drain Voltage
=
Pulse Width PW (S)
–
5 V
100 m
–0.8
–1.2
t d(on)
0, 5 V
Vout
1
Vin
P
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
DM
Pulse Test
V
–1.6
SD
10
Switching Time Waveform
10%
(V)
–2.0
PW
10%
T
90%
t r
100
D =
t d(off)
1000
PW
T
10000
90%
90%
10%
t f