BSN274 NXP Semiconductors, BSN274 Datasheet - Page 3

• Manufacturer Part Number: BSN274
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Notes
1. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum
CHARACTERISTICS
T
April 1995
V
I
I
P
T
T
R
V
I
V
R
R
C
C
D
DM
j
DSS
SYMBOL
V
I
stg
j
DS
tot
(BR)DSS
GS(th)
Y
th j-a
= 25 C unless otherwise specified.
DS(on)
DS(on)
iss
oss
N-channel enhancement mode vertical
D-MOS transistor
GSS
SYMBOL
GSO
fs
10 mm
SYMBOL
10 mm.
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
operating junction temperature
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate threshold voltage
drain-source on-resistance
drain-source on-resistance
transfer admittance
input capacitance
output capacitance
from junction to ambient (note 1)
PARAMETER
PARAMETER
PARAMETER
V
I
V
V
V
I
V
I
V
I
V
I
V
V
V
f = 1 MHz
V
V
f = 1 MHz
D
D
D
D
D
V
GS
DS
GS
DS
DS
GS
GS
DS
DS
GS
DS
GS
CONDITIONS
open drain
DC
peak
up to T
= 10 A
= 1 mA
= 250 mA
= 20 mA
= 250 mA
GS
= 220 V
= 0
= V
= 25 V
= 25 V
= 25 V
= 0
= 0
= 10 V
= 2.4 V
= 0
= 0
= 20 V
3
GS
CONDITIONS
amb
= 25 C (note 1)
270
0.8
200
MIN.
6.5
9
400
65
20
BSN274; BSN274A
TYP.
MIN.
65
VALUE
125
1
100
2
8
14
90
30
Product specification
MAX.
MAX.
270
250
150
150
20
1
1
V
V
mA
A
W
K/W
C
C
V
nA
V
mS
pF
pF
UNIT
UNIT
A
UNIT