RJK1562DJE Renesas Electronics Corporation., RJK1562DJE Datasheet - Page 3

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RJK1562DJE

Manufacturer Part Number
RJK1562DJE
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
RJK1562DJE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by maximum safe operation area
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 1 of 6
Capable of 2.5 V gate drive
Low on-resistance
R
Low drive current
DS(on)
2. PW
= 1.2
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
10 s, duty cycle
typ. (at I
Item
D
= 0.5 A, V
1%
GS
= 2.5 V, Ta = 25 C)
3 2
1
I
D (pulse)
Symbol
I
I
DR
D
V
V
Tstg
Pch
Tch
ch-a
I
Note1
DSS
GSS
DR
Note2
Note2
G
D
S
–55 to +150
Ratings
150
±10
139
150
0.9
1
4
1
4
1. Source
2. Drain
3. Gate
REJ03G1889-0100
Jan 07, 2010
Unit
C/W
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.1.00

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