RJK1562DJE Renesas Electronics Corporation., RJK1562DJE Datasheet - Page 5

• Manufacturer Part Number: RJK1562DJE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1562DJE
Main Characteristics
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 3 of 6
0.001
0.01
0.01
Static Drain to Source on State Resistance
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
0
Ta = 25°C
1 shot
Tc = 75°C
Drain to Source Voltage V
Gate to Source Voltage V
Operation in this
area is limited by
R
V
Pulse Test
V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
vs. Drain Current (Typical) (1)
DS(on)
DS
GS
= 10 V
= 4 V
Drain Current I
1
1
−25°C
25°C
10
2
1
D
100
(A)
3
GS
DS
(V)
(V)
1000
10
4
2.0
1.6
1.2
0.8
0.4
Static Drain to Source on State Resistance
0.1
10
0
5
4
3
2
1
0
1
-25
0.1
0
Drain to Source Voltage V
Ta = 25°C
Pulse Test
vs. Case Temperature (Typical)
V
Ta = 25°C
Pulse Test
Gate to Source Cutoff Voltage
Typical Output Characteristics
vs. Drain Current (Typical) (2)
Case Temperature
GS
0
= 2.5 V
2
Drain Current I
I
25
D
= 10 mA
4
50
0.1 mA
1 mA
1
75
6
D
V
100 125 150
Tc (°C)
DS
2 V
(A)
= 10 V
8
DS
(V)
10
10