RJK1562DJE Renesas Electronics Corporation., RJK1562DJE Datasheet - Page 6

• Manufacturer Part Number: RJK1562DJE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1562DJE
REJ03G1889-0100 Rev.1.00 Jan 07, 2010
Page 4 of 6
100
160
120
Static Drain to Source on State Resistance
10
80
40
8
7
6
5
4
3
2
1
0
1
0.1
Dynamic Input Characteristics (Typical)
0
-25
0
V
V
Pulse Test
I
Ta = 25 °C
D
Reverse Drain Current I
DS
GS
= 1 A
vs. Temperature (Typical) (1)
Case Temperature Tc (°C)
Body-Drain Diode Reverse
0
= 4 V
Recovery Time (Typical)
Gate Charge Qg (nC)
0.8
25
V
DD
I
D
50
1.6
V
= 3 A
= 30 V
DD
120 V
1
di / dt = 100 A / µs
V
60 V
GS
=120 V
75
60 V
30 V
= 0, Ta = 25°C
2 A
0.5 A
2.4
100 125 150
DR
1 A
V
3.2
(A)
GS
10
8
6
4
2
0
1000
100
Static Drain to Source on State Resistance
0.1
10
8
7
6
5
4
3
2
1
0
1
4
3
2
1
0
-25
0
0
V
Pulse Test
Drain to Source Voltage V
Source to Drain Voltage V
V
f = 1 MHz
Ta = 25°C
Source to Drain Voltage (Typical)
V
Ta = 25 °C
Pulse Test
GS
GS
GS
vs. Temperature (Typical) (2)
Case Temperature Tc (°C)
0
= 2.5 V
Reverse Drain Current vs.
= 0
= 0
0.4
Drain to Source Voltage
Typical Capacitance vs.
25
25
I
0.8
D
50
= 3 A
75
1.2
2 A
0.5 A
50
100 125 150
1.6
1 A
SD
DS
Ciss
Coss
Crss
(V)
(V)
2.0
75