PHB23NQ10LT NXP Semiconductors, PHB23NQ10LT Datasheet - Page 6

• Manufacturer Part Number: PHB23NQ10LT
• Description: Phb23nq10lt N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
PHB23NQ10LT_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
60
40
20
25
20
15
10
0
5
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
j
0
j
T
= 25 C
= 25 C and 175 C; V
j
= 25 C
1
1
T
j
= 175 C
2
2
DS
> I
3
25 C
D
R
V
3
DSon
GS
4
V
003aab113
003aab115
(V) =
V
GS
DS
(V)
(V)
3.4
2.6
2.2
10
5
3
5
4
Rev. 01 — 11 July 2006
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
160
120
a
1.5
0.5
80
40
2
1
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
-60
j
0
V
= 25 C
=
T
GS
j
= 25 C
----------------------------- -
R
(V) =
DSon 25 C
R
N-channel TrenchMOS logic level FET
DSon
2.6
0
20
PHB23NQ10LT
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
60
3
40
120
3.4
I
D
003aab114
T
(A)
j
03af18
3.8
( C)
10
5
180
60
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