PHB37N06T NXP Semiconductors, PHB37N06T Datasheet - Page 4

• Manufacturer Part Number: PHB37N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
ID% = 100 I
ID/A
1000
100
I
120
110
100
Fig.2. Normalised continuous drain current.
10
D
120
110
100
90
80
70
60
50
40
30
20
10
1
90
80
70
60
50
40
30
20
10
0
& I
0
1
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
DM
= f(V
20
PD% = 100 P
20
RDS(ON) = VDS/ID
D
/I
D 25 ˚C
40
40
DS
DC
); I
transistor
60
60
= f(T
DM
single pulse; parameter t
80
80
Tmb / C
Tmb / C
mb
D
/P
10
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
VDS/V
120
120
= f(T
mb
140
140
mb
= 25 ˚C
)
160
160
GS
tp =
1 us
10us
100 us
1 ms
10ms
100ms
180
180
10 V
100
p
4
ID/A
100
Fig.5. Typical output characteristics, T
80
60
40
20
Fig.6. Typical on-state resistance, T
0
60
55
50
45
40
35
30
25
20
0.01
0
0.1
10
0
RDS(ON)/mOhm
VGS/V =
1
ZTH/ (K/W)
Fig.4. Transient thermal impedance.
0.5
0.2
0.1
0.05
0.02
0
1.0E-06
Z
16
14
12
10
R
th j-mb
2
I
DS(ON)
D
6
= f(V
= f(t); parameter D = t
20
0.0001
= f(I
DS
6.5
4
); parameter V
30
D
); parameter V
VDS/V
ID/A
7
0.01
t/s
40
6
P
D
Product specification
t
p
50
T
PHB37N06T
8
GS
1
GS
p
D =
8
/T
9
j
VGS/V =
j
60
= 25 ˚C .
T
t
p
= 25 ˚C .
t
10
Rev 1.100
100
70
10
10.0
4.5
4.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0