PHB37N06T NXP Semiconductors, PHB37N06T Datasheet - Page 6

• Manufacturer Part Number: PHB37N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
VGS/V
IF/A
V
I
100
GS
F
80
60
40
20
12
10
0
= f(V
8
6
4
2
0
0
= f(Q
0
Fig.14. Typical reverse diode current.
SDS
G
); conditions: I
); conditions: V
5
0.5
transistor
10
Tj/C =
VSDS/V
VDS = 14V
QG/nC
D
15
175
GS
= 30 A; parameter V
= 0 V; parameter T
20
1
VDS = 44V
25
25
DS
1.5
30
j
6
VGS
0
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
Fig.17. Switching test circuit.
DSS
40
% = f(T
RGS
0.5 LI
60
RG
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
RD
VDS
120
BV
T.U.T.
VDS
T.U.T.
Product specification
DSS
140
D
PHB37N06T
shunt
= 32 A
R 01
V
DD
160
-
+
-
+
Rev 1.100
-ID/100
180
VDD
VDD