PHB87N03T NXP Semiconductors, PHB87N03T Datasheet

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PHB87N03T

Manufacturer Part Number
PHB87N03T
Description
Trenchmos Transistor Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
converters and general purpose
switching applications.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
1 Current limited by package to 75A from a theoretical value of 87A.
December 1997
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
mb
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
for
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
use
transistor
in
DC-DC
mode
1
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
minimum footprint, FR4
board
mb
mb
mb
mb
GS
3
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
mb
V
GS
1
= 10 V
SYMBOL
TYP.
MIN.
- 55
50
-
-
-
-
-
-
-
-
g
MAX.
Product specification
10.5
142
175
30
75
MAX.
MAX.
1.05
240
142
175
30
30
20
75
61
-
PHB87N03T
d
s
Rev 1.200
UNIT
UNIT
K/W
K/W
UNIT
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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PHB87N03T Summary of contents

Page 1

... V GS PIN CONFIGURATION CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - minimum footprint, FR4 board 1 Product specification PHB87N03T MAX. UNIT 30 75 142 175 10 SYMBOL MIN. MAX. UNIT - 240 - 142 175 ˚ ...

Page 2

... Resistive load Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad 2 Product specification PHB87N03T MIN. MAX. UNIT - 2 kV MIN. TYP. MAX. UNIT ...

Page 3

... -dI /dt = 100 - CONDITIONS ˚ Product specification PHB87N03T MIN. TYP. MAX. UNIT - - 240 A - 0. MIN. TYP. MAX. UNIT ...

Page 4

... Fig.5. Typical output characteristics 7510-30 RDS(ON) / mOhm 100 100 ms 0 100 ˚C Fig.6. Typical on-state resistance Product specification PHB87N03T Zth / (K/W) 0.5 0.2 0 1E-07 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-mb ...

Page 5

... 30V TrenchMOS 10000 1000 100 100 200 150 Fig.12. Typical capacitances f Product specification PHB87N03T VGS(TO max. typ. min. - 100 150 Fig.10. Gate threshold voltage. = f(T ); conditions mA Sub-Threshold Conduction 2% typ ...

Page 6

... Fig.15. Normalised avalanche energy rating. DS 7510-30 VGS VGS 0 6 Product specification PHB87N03T WDSS 100 120 140 Tmb / f(T ); conditions DSS VDS T.U. RGS shunt Fig.16. Avalanche energy test circuit ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". December 1997 10.3 max 11 max 15.4 0.85 max (x2) Fig.18. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting . 7 Product specification PHB87N03T 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.200 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 8 Product specification PHB87N03T Rev 1.200 ...

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