PHB87N03T NXP Semiconductors, PHB87N03T Datasheet - Page 4

• Manufacturer Part Number: PHB87N03T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
ID% = 100 I
1000
100
10
I
120
110
100
Fig.2. Normalised continuous drain current.
D
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
1
0
& I
ID / A
0
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
ID (A)
PD%
DM
20
= f(V
20
PD% = 100 P
D
/I
D 25 ˚C
40
40
DS
); I
transistor
60
60
= f(T
DM
DC
single pulse; parameter t
Tmb / C
80
80
Tmb / C
mb
VDS / V
D
Limited by package
/P
10
); conditions: V
100 120 140 160 180
D 25 ˚C
100
Normalised Power Derating
120
= f(T
Current Derating
mb
140
mb
= 25 ˚C
)
tp = 100 us
1 ms
10 ms
100 ms
160
GS
7510-30
180
10 V
p
100
4
100
Fig.5. Typical output characteristics, T
30
20
10
80
60
40
20
Fig.6. Typical on-state resistance, T
1E+01
1E+00
0
1E-01
1E-02
1E-03
0
0
0
RDS(ON) / mOhm
ID / A
10
12
1E-07
Fig.4. Transient thermal impedance.
Zth / (K/W)
0.05
0.02
Z
0.5
0.2
0.1
8
R
th j-mb
0
20
I
DS(ON)
2
D
= f(V
1E-05
= f(t); parameter D = t
5.5
= f(I
DS
40
4
); parameter V
D
); parameter V
VDS / V
ID / A
1E-03
t / s
VGS / V =
VGS / V =
6
60
P
D
6
Product specification
t
1E-01
p
PHB87N03T
T
GS
GS
6.5
p
80
BUK7510-30
/T
D =
BUKX514-55
8
j
j
= 25 ˚C .
7510-30
10
= 25 ˚C .
t
T
p
t
Rev 1.200
1E+01
12
6.5
5.5
4.5
8
100
6
5
4
10