PHB63NQ03LT NXP Semiconductors, PHB63NQ03LT Datasheet - Page 3

• Manufacturer Part Number: PHB63NQ03LT
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09822
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
T
(%)
P
(A)
120
I D
mb
80
40
der
10 3
10 2
10
0
1
function of mounting base temperature.
= 25 C; I
0
1
=
---------------------- -
P
tot 25 C
P
tot
DM
Limit R DSon = V DS / I D
50
is single pulse; V
100%
100
GS
150
= 10V.
T mb ( C)
03aa16
200
Rev. 01 — 14 June 2002
DC
10
Fig 2. Normalized continuous drain current as a
PHP/PHB/PHD63NQ03LT
I der
I
(%)
der
120
80
40
0
function of mounting base temperature.
=
0
-------------------
I
D 25 C
I
D
50
V DS (V)
100%
t p = 10 s
100 s
1 ms
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
100
150
T mb ( C)
03ai84
03aa24
200
10
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