STN4900 Stanson Technology Co., Ltd., STN4900 Datasheet - Page 2

• Manufacturer Part Number: STN4900
• Description: Dual N Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

ABSOULTE
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150 ℃ )
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
Parameter
Parameter
Parameter
Parameter
RATINGS
RATINGS (Ta = 25 ℃ Unless otherwise noted )
RATINGS
T
T
T
T
A
A
A
A
=25℃
=70 ℃
=25℃
=70 ℃
Dual N Channel Enhancement Mode MOSFET
2
Symbol
Symbol
Symbol
Symbol
V
V
R
T
I
P
I
I
T
DSS
GSS
STG
θJA
DM
D
S
D
J
ST
ST
ST
STN4900
-55/150
-55/150
Typical
Copyright © 2007, Stanson Corp.
± 20
4.2
3.2
2.5
1.6
60
20
11
80
N4900
N4900
N4900
STN4900 2009. V1
5.3A
Unit
Unit
Unit
Unit
℃ /W
W
℃
℃
V
V
A
A
A