STN4900 Stanson Technology Co., Ltd., STN4900 Datasheet - Page 2
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STN4900
Manufacturer Part Number
STN4900
Description
Dual N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
1.STN4900.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ABSOULTE
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150 ℃ )
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
Parameter
Parameter
Parameter
Parameter
RATINGS
RATINGS (Ta = 25 ℃ Unless otherwise noted )
RATINGS
T
T
T
T
A
A
A
A
=25℃
=70 ℃
=25℃
=70 ℃
Dual N Channel Enhancement Mode MOSFET
2
Symbol
Symbol
Symbol
Symbol
V
V
R
T
I
P
I
I
T
DSS
GSS
STG
θJA
DM
D
S
D
J
ST
ST
ST
STN4900
-55/150
-55/150
Typical
Copyright © 2007, Stanson Corp.
± 20
4.2
3.2
2.5
1.6
60
20
11
80
N4900
N4900
N4900
STN4900 2009. V1
5.3A
Unit
Unit
Unit
Unit
℃ /W
W
℃
℃
V
V
A
A
A