STN4900 Stanson Technology Co., Ltd., STN4900 Datasheet - Page 3

• Manufacturer Part Number: STN4900
• Description: Dual N Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Tran Conductance
Diode Forward Voltage
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Parameter
Parameter
Parameter
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
CHARACTERISTICS
Symbol
Symbol
Symbol
Symbol
T
V
R
V
J
I
(BR)DSS
t
Coss
t
=55 ℃
Crss
I
I
Ciss
DS(on)
V
GS(th)
D(on)
g
Q
Q
d(off)
d(on)
Q
GSS
DSS
tr
tf
SD
fs
gd
gs
g
Dual N Channel Enhancement Mode MOSFET
V
VDS=15V,VGS=0V
V
V
I
V
V
V
V
V
V
V
V
DS
D
3
I
DD
GS
DS
GS
DS
GS
DS
DS
=3.4A,V
S
DS
DS
=V
=1.7A,V
=4
=30V,V
=30V,R
=0V,I
=0V,V
=
=15V,I
≦5V,V
Condition
Condition
Condition
Condition
=60V,V
=60V,V
10V, I
I
f=1MHz
.5V, I
R
GS
D
≡ 4.3A
G
,I
=1 Ω
D
D
GS
GEN
=250uA
=250 uA
GS
D
D
GS
L
D
GS
GS
GS
=8.8 Ω
=±20V
=4.3A
=5.3A
=4.7A
=10V
=10V
=10V
=0V
=0V
=0V
ST
ST
ST
STN4900
Copyright © 2007, Stanson Corp.
Min
Min
Min
Min Typ
0.5
N4900
N4900
60
25
N4900
STN4900 2009. V1
0.110
0.115
Typ
Typ
Typ Max
675
0.8
2.5
2.6
15
15
80
40
10
15
25
12
0.118
0.125
±100
Max
Max
Max Unit
1.5
1.2
20
20
25
35
20
1
5
5.3A
0
Unit
Unit
Unit
nA
uA
nC
nS
pF
Ω
V
V
A
S
V