BFG10W NXP Semiconductors, BFG10W Datasheet - Page 2

• Manufacturer Part Number: BFG10W
• Description: Bfg10w/x Uhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
1995 Sep 22
Pulsed, class-AB, duty cycle: < 1 : 2; t
Pulsed, class-AB, duty cycle: < 1 : 8; t
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
C
C(AV)
stg
j
Small size discrete power amplifier
900 MHz and 1.9 GHz operating
areas
Gold metallization ensures
excellent reliability.
Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
CBO
CEO
EBO
tot
th j-s
UHF power transistor
High efficiency
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
MODE OF OPERATION
amb
= 25 C in a common-emitter test circuit.
PARAMETER
PARAMETER
p
p
= 10 ms
= 4.6 ms
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
PINNING
PIN
1
2
3
4
collector
emitter
base
emitter
(GHz)
1.9
0.9
0.9
f
DESCRIPTION
open emitter
open base
open collector
up to T
up to T
P
2
tot
= 400 mW
s
s
CONDITIONS
CONDITIONS
= 102 C; note 1
= 102 C; note 1;
V
(V)
3.6
6
6
CE
fpage
(mW)
200
650
360
Marking code: T5.
P
L
65
MIN.
VALUE
Fig.1 SOT343.
4
1
Top view
180
Product specification
(dB)
12.5
G
10
5
p
BFG10W/X
20
10
2.5
250
250
400
+150
175
MAX.
3
2
MBK523
UNIT
K/W
V
V
V
mA
mA
mW
(%)
C
C
UNIT
50
50
50
c