NE85001 Renesas Electronics Corporation., NE85001 Datasheet - Page 2

• Manufacturer Part Number: NE85001
• Description: 1 W C-band Power Gaas Fet N-channel Gaas Mes Fet
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDING OPERATION RANDGE
ELECTRICAL CHARACTERISTICS (T
PERFORMANCE SPECIFICATIONS (T
2
Drain to Source Voltage
Channel Temperature
Input Power
Gate Resistance
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
CHARACTERISTIC
Output Power
Gate to source
Current
Linear Gain
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Total Power Disipation(*)
Drain Current
Gate Current
Channel Temperature
Storage Temperature
*
** The same conditions as the above except this.
Pin for Pout specification.
CHARACTERISTIC
CHARACTERISTIC
PACKAGE CODE
PART NUMBER
P
Igs
G
SYMBOL
O
L
SYMBOL
SYMBOL
MIN.
28.5
–2.0
Gcomp
–
Idss
V
gm
T
Rg
R
V
DS
ch
NE8500100
NE8500100-WG
NE8500100-RG
th
P
A
A
= 25 ˚C)
A
= 25 ˚C)
= 25 ˚C)
CHIP
TYP.
–
–
9
MIN.
MIN.
–3.0
430
9
–
–
–
–
–
MAX.
2.0
–
–
TYP.
TYP.
300
V
V
V
P
I
I
T
T
D
G
–
–
–
–
–
–
–
DSX
GDX
GSX
T
ch
stg
MIN.
28.5
–2.0
–
MAX.
MAX.
–1.0
130
860
10
30
3
1
–
NE8500199
TYP.
99
–65 to 175
dBcomp
–
–
9
UNIT
UNIT
˚C/W
mA
mS
k
˚C
1.12
V
V
–18
–12
175
6.0
6.0
15
MAX.
2.0
–
–
Vds = 2.5 V, Vgs = 0 V
Vds = 2.5 V, Ids = 4 mA
Vds = 2.5 V, Ids = Idss
UNIT
dBm
TEST CONDITIONS
mA
dB
V
V
V
W
A
mA
˚ C
˚ C
*T
NE85001 SERIES
C
= 25 ˚C
TEST CONDITIONS
Pin
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 k
Pin = 21.0 dBm(*)
11 dBm (**)