PBSS301NZ NXP Semiconductors, PBSS301NZ Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PBSS301NZ
Manufacturer Part Number
PBSS301NZ
Description
Pbss301nz 12 V, 5.8 A Npn Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS301NZ.pdf
(14 pages)
Philips Semiconductors
PBSS301NZ_1
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
Fig 11. Collector-emitter saturation resistance as a
R
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
( )
10
10
10
10
10
10
10
1
1
1
2
3
10
2
1
2
10
I
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
006aaa566
006aaa569
3
3
I
I
C
C
(1)
(2)
(3)
(mA)
(mA)
Rev. 01 — 7 September 2006
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
1
1
1
2
3
10
3
2
1
2
10
T
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
C
C
12 V, 5.8 A NPN low V
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
(1)
(2)
(3)
(1)
(3)
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
(2)
1
1
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
PBSS301NZ
10
10
2
2
CEsat
10
10
(BISS) transistor
006aaa567
3
006aaa571
3
I
I
C
C
(mA)
(mA)
10
10
4
4
8 of 14