HN1L02FU TOSHIBA Semiconductor CORPORATION, HN1L02FU Datasheet - Page 2

• Manufacturer Part Number: HN1L02FU
• Description: N Channel Mos Type, P Channel Mos Type High Speed Switching, Analog Switch Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 Electrical Characteristics
Q2 Electrical Characteristics
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Characteristic
Characteristic
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V
V
R
R
Symbol
Symbol
(BR) DSS
(BR) DSS
DS (ON)
DS (ON)
I
I
C
I
I
C
C
C
|Y
C
|Y
C
GSS
DSS
GSS
DSS
V
V
t
t
t
t
oss
on
off
oss
on
off
iss
rss
iss
rss
th
fs
th
fs
(Ta
(Ta
|
|
=
=
V
I
V
V
V
I
V
f = 1MHz
V
f = 1MHz
V
f = 1MHz
V
V
V
V
V
I
V
V
V
I
V
f = 1MHz
V
f = 1MHz
V
f = 1MHz
V
V
V
V
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
25°C)
25°C)
= 100μA, V
= 10mA, V
= −100μA, V
= −10mA, V
= 20V, V
= 3V, I
= 3V, I
= 3V, V
= 3V, V
= 3V, V
= −20V, V
= −3V, I
= −3V, I
= −3V, V
= −3V, V
= −3V, V
= 10V, V
= 3V, I
= 0~2.5V
= 3V, I
= 0~2.5V
= −7V, V
= −3V, I
= 0~−2.5V
= −3V, I
= 0~−2.5V
D
D
D
D
GS
GS
GS
D
D
D
D
GS
= 0.1mA
= 10mA
GS
= 10mA,
= 10mA,
GS
GS
GS
DS
DS
2
GS
GS
GS
= −0.1mA
= −10mA
= −10mA,
= −10mA,
GS
= 0,
= 0,
= 0,
Test Condition
Test Condition
= 2.5V
= 0
= 0
= 0
= 0,
= 0,
= 0,
= 0
= −2.5V
= 0
= 0
−0.5
−20
Min
Min
0.5
20
20
15
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.14
0.14
10.4
0.15
0.13
Typ.
Typ.
5.5
1.6
6.5
2.8
8.4
20
20
―
―
―
―
―
―
―
―
―
―
HN1L02FU
2007-11-01
−1.5
Max
Max
1.5
−1
−1
―
―
40
―
―
―
―
―
―
―
40
―
―
―
―
―
1
1
Unit
Unit
mS
mS
μA
μA
μA
μA
pF
pF
pF
μs
μs
pF
pF
pF
μs
μs
V
V
Ω
V
V
Ω