BUW11F NXP Semiconductors, BUW11F Datasheet

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BUW11F

Manufacturer Part Number
BUW11F
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet

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BUW11F
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Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
DATA SHEET
BUW11F; BUW11AF
Silicon diffused power transistors
DISCRETE SEMICONDUCTORS
1997 Aug 14

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BUW11F Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BUW11F; BUW11AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 ...

Page 2

... Fig.1 Simplified outline (SOT199) and symbol. CONDITIONS open base see Figs 2 and 4 t < 20 ms; see Fig see Fig.3 h resistive load; see Figs 8 and 9 2 Product specification BUW11F; BUW11AF 2 handbook, halfpage 1 3 MBB008 MAX. 850 V 1000 V 400 V 450 V 1.5 ...

Page 3

... CONDITIONS open base see Figs 2 and 4 t < 20 ms; see Fig < see Fig.3; note see Fig.3; note 2 h PARAMETER 3 Product specification BUW11F; BUW11AF VALUE UNIT 3.95 K/W 3.05 K/W 35 K/W MIN. MAX. UNIT 850 V 1000 V 400 V 450 ...

Page 4

... 100 600 mA; Con 250 100 2 500 mA; Con 300 100 Product specification BUW11F; BUW11AF MIN. TYP. MAX. UNIT 400 V 450 V 1.5 V 1.5 V 1 ...

Page 5

... Mounted without heatsink compound and force on centre of package. T < Region of permissible DC operation Permissible extension for repetitive pulse operation. 1997 Aug max II I BUW11F BUW11AF Fig.2 Forward bias SOAR. 5 Product specification BUW11F; BUW11AF MGB930 (V) ...

Page 6

... Test circuit for collector-emitter sustaining voltage. 1997 Aug 14 MGK674 handbook, halfpage 100 150 handbook, halfpage 50 V 100 to 200 horizontal oscilloscope vertical 1 MGE252 6 BUW11F; BUW11AF ( 400 800 = 100 Fig.4 Reverse bias SOAR (mA) 250 ...

Page 7

... andbook, halfpage off 1000 200 H. C Fig.10 Test circuit inductive load and reverse 7 Product specification BUW11F; BUW11AF D.U. MGE244 0.01 and R are selected in accordance with I ...

Page 8

... Philips Semiconductors Silicon diffused power transistors t r handbook, halfpage 90 10% 90 10% Fig.11 Switching time waveforms with inductive load. 1997 Aug off off MGE238 8 Product specification BUW11F; BUW11AF ...

Page 9

... Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT199 1997 Aug scale 16.5 21.5 15.3 7.8 5.45 10.9 15.7 20.5 14.7 6.8 REFERENCES JEDEC EIAJ 9 BUW11F; BUW11AF ( 3.7 0.8 2.1 3.3 6.2 0.4 3.3 0.6 1.9 3.1 5.8 EUROPEAN PROJECTION Product specification SOT199 45 ISSUE DATE 97-06-27 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 BUW11F; BUW11AF 10 Product specification ...

Page 11

... Philips Semiconductors Silicon diffused power transistors 1997 Aug 14 BUW11F; BUW11AF NOTES 11 Product specification ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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