JDV2S06FS TOSHIBA Semiconductor CORPORATION, JDV2S06FS Datasheet

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JDV2S06FS

Manufacturer Part Number
JDV2S06FS
Description
Toshiba Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
VCO for UHF Band Radio
Maximum Ratings
Electrical Characteristics
Marking
High Capacitance Ratio : C
Low Series Resistance : r
This device is suitable for use in a small-size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured: V
Characteristics
Characteristics
A
(Ta = 25°C)
s
1V
TOSHIBA DIODE Silicon Epitaxial Planar Type
= 0.27 Ω (typ.)
/C
4V
(Ta = 25°C)
= 2.0 (typ.)
JDV2S06FS
Symbol
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
sig
−55~150
I
V
V
V
V
R
Rating
R
R
R
R
150
= 500 mVrms
10
= 1 µA
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
1
Test Condition
Unit
°C
°C
V
Weight: 0.0006 g (typ.)
JEDEC
JEITA
TOSHIBA
fSC
0.07
M
Min
7.0
1.8
10
15
A
±0.05
0.2
0.6±0.05
Typ.
0.27
8.0
2.0
16
JDV2S06FS
1-1L1A
2005-12-05
Max
0.45
8.5
17
3
A
0.48 +0.02
0.1±0.05
-0.03
Unit: mm
Unit
nA
pF
V

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JDV2S06FS Summary of contents

Page 1

... MHz MHz  470 MHz 500 mVrms sig 1 JDV2S06FS 0.6±0.05 0.2 ±0. °C °C fSC JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.0006 g (typ.) Min Typ. Max  10  ...

Page 2

... Reverse voltage V R (V) 100 10 1 0.1 0. Reverse voltage MHz −1 −2 −3 −40 −20 10 Ambient temperature JDV2S06FS I – 80° δ – °C 2005-12-05 ...

Page 3

... JDV2S06FS 2005-12-05 ...

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