BLW97 NXP Semiconductors, BLW97 Datasheet - Page 8

• Manufacturer Part Number: BLW97
• Description: Hf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RUGGEDNESS
The BLW97 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
175 W (P.E.P.) under the following conditions:
V
Figures 11 and 12 t typical curves which are valid for one
transistor of a push-pull amplifier in s.s.b. class-AB
operation.
August 1986
handbook, halfpage
CE
HF power transistor
V
f
Fig.9
d 3 , d 5
2
CE
= 28 V; f = 28 MHz; T
(dB)
= 28,001 MHz; T
= 28 V; I
20
40
60
80
0
Intermodulation distortion (see note on
preceding page).
C(ZS)
= 0,1 A; f
h
= 25 C.
1
= 28,000 MHz;
h
120
= 25 C; R
typ
P L (W) P.E.P.
th mb-h
d 3
d 5
MGP710
= 0,2 K/W.
240
8
handbook, halfpage
handbook, halfpage
V
f
V
P
Z
2
CE
CE
L
L
(dB)
= 28,001 MHz; T
G P
Fig.10 Power gain and double-tone efficiency.
(dB)
= 175 W(PEP); T
= 1,55
G P
= 28 V; I
= 28 V; I
16
12
30
20
10
8
4
0
0
1
C(ZS)
C(ZS)
typ
= 0,1 A;
= 0,1 A; f
h
h
= 25 C.
Fig.11 Power gain.
= 25 C;
1
= 28,000 MHz;
120
10
typ
G P
P L (W) P.E.P.
c dt
Product specification
f (MHz)
MGP711
MGP712
BLW97
240
10
2
80
60
40
20
0
(%)
c dt