PZ1418 NXP Semiconductors, PZ1418 Datasheet - Page 2
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PZ1418
Manufacturer Part Number
PZ1418
Description
Pz1418b30u Npn Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PZ1418.pdf
(12 pages)
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
QUICK REFERENCE DATA
RF performance up to T
1997 Nov 13
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output prematching ensures good
stability and easy broadband use.
Common base class-B broadband amplifiers under CW
conditions in military and professional applications.
NPN microwave power transistor
1.4 to 1.8
(GHz)
f
mb
V
(V)
28
= 25 C in a common base class-B wideband amplifier.
CC
(W)
P
27
L
WARNING
2
PINNING - SOT443A
handbook, halfpage
(dB)
G
7.3
p
Top view
PIN
1
2
3
Fig.1 Simplified outline and symbol.
1
2
(%)
38
C
collector
emitter
base; connected to flange
3
DESCRIPTION
PZ1418B30U
Product specification
see Figs 6 and 7
MAM314
Z
( )
i
b
; Z
L
c
e