VND5012AK STMicroelectronics, VND5012AK Datasheet - Page 16

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VND5012AK

Manufacturer Part Number
VND5012AK
Description
Double Channel High Side Driver With Analog Current Sense For Automotive Applications
Manufacturer
STMicroelectronics
Datasheet

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Application Information
3.1.2
3.2
3.3
16/22
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
Solution 2:
A diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Load Dump Protection
D
V
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
µC I/Os PROTECTION:
If a ground protection network is used and negative transient are present on the V
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-V
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
prot
/I
latchup
GND
= - 100V and I
≤ 180kΩ.
GND
) in the ground line.
=1kΩ) should be inserted in parallel to D
≤ R
prot
≤ (V
prot
latchup
OHµC
=10kΩ, C
-V
≥ 20mA; V
IH
-V
EXT
GND
=10nF.
) / I
OHµC
IHmax
≥ 4.5V
GND
if the device drives an
prot
VND5012AK-E
) in line to
CC
CC
line,
line

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