MT3S37T TOSHIBA Semiconductor CORPORATION, MT3S37T Datasheet
MT3S37T
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MT3S37T Summary of contents
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... MT3S37T (Ta = 25°C) Symbol Rating Unit CBO V 4.5 V CEO V 1.5 V EBO 100 150 ° −55~150 °C stg 1 MT3S37T Unit: mm TESM JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight:0.0022g (typ.) 2007-11-01 ...
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... Test Condition I V =8V CBO =1V EBO EB C hFE V =3V, I =20mA =1V, I =0, f=1MHz =1V, I =0, f=1MHz (Note MT3S37T Min Typ. Max Unit GHz 0 1.2 1.8 dB Min Typ. Max Unit - - 1 µ µ ...
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... Ta=25℃ 0 0.1 100 COLLECTOR-BASE VOLTAGE V CB (V) 120 100 100 0 3 MT3S37T 2 |S21e VCE= f=2GHz Ta=25℃ 10 COLLECTOR CURRENT I C (mA) Cre,Cob-V CB IE=0 f=1MHz Ta=25℃ - 100 125 150 175 AMBIENT TEMPERATURE Ta(℃) 2007-11-01 100 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 MT3S37T 20070701-EN GENERAL 2007-11-01 ...