TPM2626-60 TOSHIBA Semiconductor CORPORATION, TPM2626-60 Datasheet
TPM2626-60
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TPM2626-60 Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TPM2626-60 PARTIALLY MATCHED TYPE HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TPM2626-60 SYMBOL UNIT ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=12V IDS≅12.0A Pin=38.0dBm Output Power(Pout) vs. Input Power(Pin) freq.=2.6GHz 50 VDS=12V IDS≅12A TPM2626-60 2.4 2.5 2.6 2.7 Frequency(GHz) Pout ηadd 32 36 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 200 150 100 DRAWING OF RECOMMENDABLE MATCHING NETWORK TPM2626-60 80 120 Tc( ° 200 160 ...