TPM2828-60 TOSHIBA Semiconductor CORPORATION, TPM2828-60 Datasheet
TPM2828-60
Manufacturer Part Number
TPM2828-60
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPM2828-60.pdf
(3 pages)
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
Output Power at 2dB Gain
Power Gain at 2dB Gain
Drain Current
Power Added Efficiency
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Thermal Resistance
Voltage
Compression Point
Compression Point
HIGH POWER
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
P2dB=47.0dBm at 2.8GHz to 2.9GHz
G2dB=7.0dB at 2.8GHz to 2.9GHz
Recommended gate resistance (Rg) : Rg = 30 Ω (Max.)
HIGH GAIN
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
I
η
th(c-c)
GSoff
gm
DSS
I
GSO
2dB
DS
2dB
add
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
f = 2.8GHz to 2.9GHz
DS
DS
DS
GS
= 12.0A
= 300mA
= -10.0 mA
= 3V
=
=
= 0V
CONDITIONS
CONDITIONS
IDSset≅10.0A
VDS= 12V
3V
3V
PARTIALLY MATCHED TYPE
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TPM2828-60
UNIT
UNIT
° C/W
dBm
dB
%
A
S
V
A
V
MIN.
47.0
MIN.
-1.0
7.0
⎯
⎯
⎯
⎯
⎯
-5
Rev. Apr., 2008
TYP. MAX.
48.0
TYP. MAX.
20.0
7.5
-1.8
15
29
0.6
38
⎯
17
-3.0
⎯
⎯
⎯
0.8
⎯
⎯
⎯
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TPM2828-60 Summary of contents
Page 1
... TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TPM2828-60 PARTIALLY MATCHED TYPE HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° Channel Temperature Storage PACKAGE OUTLINE (2-16G6A) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TPM2828-60 SYMBOL UNIT ...
Page 3
... Power Dissipation(PT) vs. Case Temperature(Tc) 200 150 100 DRAWING OF RECOMMENDABLE MATCHING NETWORK INPUT Substrate Material: Teflon (Er=2.8) Thickness: 0.8 mm TPM2828-60 80 120 Tc( ° Unit 200 160 OUTPUT 12 ...