MT4S100U TOSHIBA Semiconductor CORPORATION, MT4S100U Datasheet - Page 2

• Manufacturer Part Number: MT4S100U
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution: This device is sensitive to electrostatic discharge.
Transition Frequency
Insertion Gain
Noise Figure
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
Please make enough tool and equipment earthed when you handle.
Characteristics
Characteristics
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
|S21e|
I
I
hFE
CBO
C
EBO
C
NF
fT
ob
re
2
V
V
V
V
V
V
V
V
CE
CE
CE
CB
EB
CE
CB
CB
2
=1V, I
=2V, I
=2V, I
=2V, I
=6V, I
=2V, I
=2V, I
=2V, I
C
C
C
C
E
C
E
E
Test Condition
Test Condition
=0
=0
=0, f=1MHz
=0, f=1MHz (Note 1)
=10mA, f=2GHz
=10mA, f=2GHz
=5mA, f=2GHz
=10mA
13.5
200
Min
Min
18
-
-
-
-
-
Typ.
0.72
Typ.
0.41
0.14
22
16
-
-
-
MT4S100U
2007-11-01
Max
Max
400
1.0
0.6
0.2
1
1
-
-
GHz
Unit
Unit
dB
dB
µA
µA
pF
pF
-