HY27UF161G2M Hynix Semiconductor, HY27UF161G2M Datasheet - Page 2

• Manufacturer Part Number: HY27UF161G2M
• Description: 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Revision History
Rev 0.7 / Apr. 2005
Revision
No.
0.5
0.6
0.7
1) Correct AC characteristics(tREH)
2) Add Errata
1) Change AC characteristics
2) Add tADL parameter
- tADL=100ns
3) Correct table.9
1) Correct AC Timing Characteristics Table
- Errata value is eddited.
- tADL(max) is changed to tADL(min).
2) Change Errata
- tREA is deleted from the errata
3) Edit pin Description table
4) Delete Multiple Die & Stacked Devices Access
- Texts & tables are deleted.
5) Edit Data Protection texts
6) Add Read ID table
7) Add tOH parameter
- tOH=15ns(min.)
8) Add Marking Information
9) Correct application note.2
- tCS(2us) is changed to 100ns.
Specification Read(all)
Relaxed
before: 30ns-> after: 20ns
Before
Before
After
value
After
Except for
Read (all)
Except for
ID Read
ID Read
ID Read
ID Read
Case
Case
tDH
10
15
History
tRC
tRC
50
60
60
50
50
60
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
tRP
tRP
20
25
25
20
20
25
tREH
tREH
20
30
30
20
20
30
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
tREA
30
30
30
Jan. 25. 2005
Mar. 09. 2005
Draft Date
Apr. 06. 2005
- Continued -
Preliminary
Preliminary
Preliminary
Preliminary
Remark
2