HY27UF161G2M Hynix Semiconductor, HY27UF161G2M Datasheet - Page 46

• Manufacturer Part Number: HY27UF161G2M
• Description: 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

MARKING INFORMATION
Rev 0.7 / Apr. 2005
- Y : Y ear (ex: 5= year 2005, 06= year 2006)
- w w : W ork W eek (ex: 12= w ork w eek 12)
- x x : Process C ode
N o te
- C a p ita l L e tte r
- S m a ll L e tte r
- h yn ix
- K O R
- H Y 2 7 x F x x 1 G 2 M x x x x
x : Package Type
x : Package M aterial
x : O perating T em perature
x : B ad B lock
H Y : H Y N IX
2 7 : N A N D Flash
x: Pow er Supply
F : C lassification
x x: B it O rganization
1 G : D ensity
2 : M ode
M : V ersion
P a ck a g
F B G A
H
x
Y
x
2
x
: F(63 FB G A )
: B lank(N orm al), P(Lead Free)
: C (0℃ ~ 70℃ ), E (-25℃ ~ 85℃ )
: B (Included B ad B lock), S (1~ 5 B ad B lock),
: U (2.7V ~ 3.6V), L(2.7V ), S(1.8V)
: Single Level C ell+ Single D ie+ Large B lock
: 08(x8), 16(x16)
: 1G bit
: 1nC E & 1R /nB ; Sequential R ow R ead D isable)
: 1st G eneration
: H ynix Sym bol
: O rigin C ountry
: Part N um ber
M (-30℃ ~ 85℃ ), I(-40℃ ~ 85℃ )
P(A ll G ood B lock)
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
: Fixed Item
: N on-fixed Item
7
x
M a rk in g E x a m p le
x
F
x
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
Y
x
W
1
W
K
G
Preliminary
O
2
x
M
R
x
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