HY29F080 Hynix Semiconductor, HY29F080 Datasheet - Page 33

• Manufacturer Part Number: HY29F080
• Description: 8 Megabit (1M X 8), 5 Volt-only, Flash Memory
• Manufacturer: Hynix Semiconductor

AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, V
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
Rev. 6.1/May 01
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programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, V
command. See Table 5 for further information on command sequences.
are programmed to 0x00 before erasure.
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
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